Search Results for "nand-flash-memory-technologies-ieee-press-series-on-microelectronic-systems"

NAND Flash Memory Technologies

NAND Flash Memory Technologies

  • Author: Seiichi Aritome
  • Publisher: John Wiley & Sons
  • ISBN: 1119132606
  • Category: Computers
  • Page: 432
  • View: 9213
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Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience

Nonvolatile Memory Technologies with Emphasis on Flash

Nonvolatile Memory Technologies with Emphasis on Flash

A Comprehensive Guide to Understanding and Using Flash Memory Devices

  • Author: Joe Brewer,Manzur Gill
  • Publisher: John Wiley & Sons
  • ISBN: 1118211626
  • Category: Technology & Engineering
  • Page: 792
  • View: 717
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Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.

3D Flash Memories

3D Flash Memories

  • Author: Rino Micheloni
  • Publisher: Springer
  • ISBN: 9401775125
  • Category: Computers
  • Page: 380
  • View: 6558
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This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

Inside Solid State Drives (SSDs)

Inside Solid State Drives (SSDs)

  • Author: Rino Micheloni,Alessia Marelli,Kam Eshghi
  • Publisher: Springer Science & Business Media
  • ISBN: 9400751451
  • Category: Science
  • Page: 382
  • View: 6016
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Solid State Drives (SSDs) are gaining momentum in enterprise and client applications, replacing Hard Disk Drives (HDDs) by offering higher performance and lower power. In the enterprise, developers of data center server and storage systems have seen CPU performance growing exponentially for the past two decades, while HDD performance has improved linearly for the same period. Additionally, multi-core CPU designs and virtualization have increased randomness of storage I/Os. These trends have shifted performance bottlenecks to enterprise storage systems. Business critical applications such as online transaction processing, financial data processing and database mining are increasingly limited by storage performance. In client applications, small mobile platforms are leaving little room for batteries while demanding long life out of them. Therefore, reducing both idle and active power consumption has become critical. Additionally, client storage systems are in need of significant performance improvement as well as supporting small robust form factors. Ultimately, client systems are optimizing for best performance/power ratio as well as performance/cost ratio. SSDs promise to address both enterprise and client storage requirements by drastically improving performance while at the same time reducing power. Inside Solid State Drives walks the reader through all the main topics related to SSDs: from NAND Flash to memory controller (hardware and software), from I/O interfaces (PCIe/SAS/SATA) to reliability, from error correction codes (BCH and LDPC) to encryption, from Flash signal processing to hybrid storage. We hope you enjoy this tour inside Solid State Drives.

Inside NAND Flash Memories

Inside NAND Flash Memories

  • Author: Rino Micheloni,Luca Crippa,Alessia Marelli
  • Publisher: Springer Science & Business Media
  • ISBN: 9789048194315
  • Category: Technology & Engineering
  • Page: 582
  • View: 4312
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Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.

Vertical 3D Memory Technologies

Vertical 3D Memory Technologies

  • Author: Betty Prince
  • Publisher: John Wiley & Sons
  • ISBN: 1118760468
  • Category: Technology & Engineering
  • Page: 368
  • View: 6409
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The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and double gate memories, terrabit vertical channel and vertical gate stacked NAND flash, large scale stacking of Resistance RAM cross-point arrays, and 2.5D/3D stacking of memory and processor chips with through-silicon-via connections now and remote links later. Key features: Presents a review of the status and trends in 3-dimensional vertical memory chip technologies. Extensively reviews advanced vertical memory chip technology and development Explores technology process routes and 3D chip integration in a single reference

Flash Memories

Flash Memories

  • Author: Paulo Cappelletti,Carla Golla,Piero Olivo,Enrico Zanoni
  • Publisher: Springer Science & Business Media
  • ISBN: 1461550157
  • Category: Technology & Engineering
  • Page: 540
  • View: 3478
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A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

Inside Solid State Drives (SSDs)

Inside Solid State Drives (SSDs)

  • Author: Rino Micheloni,Alessia Marelli,Kam Eshghi
  • Publisher: Springer
  • ISBN: 9811305994
  • Category: Science
  • Page: 485
  • View: 3756
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The revised second edition of this respected text provides a state-of-the-art overview of the main topics relating to solid state drives (SSDs), covering NAND flash memories, memory controllers (including booth hardware and software), I/O interfaces (PCIe/SAS/SATA), reliability, error correction codes (BCH and LDPC), encryption, flash signal processing and hybrid storage. Updated throughout to include all recent work in the field, significant changes for the new edition include: A new chapter on flash memory errors and data recovery procedures in SSDs for reliability and lifetime improvement Updated coverage of SSD Architecture and PCI Express Interfaces moving from PCIe Gen3 to PCIe Gen4 and including a section on NVMe over fabric (NVMf) An additional section on 3D flash memories An update on standard reliability procedures for SSDs Expanded coverage of BCH for SSDs, with a specific section on detection A new section on non-binary Low-Density Parity-Check (LDPC) codes, the most recent advancement in the field A description of randomization in the protection of SSD data against attacks, particularly relevant to 3D architectures The SSD market is booming, with many industries placing a huge effort in this space, spending billions of dollars in R&D and product development. Moreover, flash manufacturers are now moving to 3D architectures, thus enabling an even higher level of storage capacity. This book takes the reader through the fundamentals and brings them up to speed with the most recent developments in the field, and is suitable for advanced students, researchers and engineers alike.

High-Bandwidth Memory Interface

High-Bandwidth Memory Interface

  • Author: Chulwoo Kim,Hyun-Woo Lee,Junyoung Song
  • Publisher: Springer Science & Business Media
  • ISBN: 3319023810
  • Category: Technology & Engineering
  • Page: 88
  • View: 6078
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This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.

Nonvolatile semiconductor memory technology

Nonvolatile semiconductor memory technology

a comprehensive guide to understanding and to using NVSM devices

  • Author: William D. Brown,Joe E. Brewer
  • Publisher: Wiley-IEEE Press
  • ISBN: 9780780311732
  • Category: Computers
  • Page: 589
  • View: 2313
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This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.

CMOS

CMOS

Circuit Design, Layout, and Simulation

  • Author: R. Jacob Baker
  • Publisher: John Wiley & Sons
  • ISBN: 9781118038239
  • Category: Technology & Engineering
  • Page: 1208
  • View: 1236
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The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

Maintaining Strategic Relevance

Maintaining Strategic Relevance

Career and Technical Education Program Discontinuance in Community and Technical Colleges

  • Author: Kevin J. Fleming
  • Publisher: Rowman & Littlefield
  • ISBN: 0761865314
  • Category: Education
  • Page: 108
  • View: 6609
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Maintaining Strategic Relevance identifies successful CTE program discontinuance including factors that affect morale during academic program changes and the impact of institutional culture. The interviews and policy analysis conducted provide best practices to effectively and appropriately discontinue CTE programs.

Computer Organization & Architecture: Themes and Variations

Computer Organization & Architecture: Themes and Variations

  • Author: Alan Clements
  • Publisher: Cengage Learning
  • ISBN: 1285415426
  • Category: Technology & Engineering
  • Page: 936
  • View: 8220
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COMPUTER ORGANIZATION AND ARCHITECTURE: THEMES AND VARIATIONS stresses the structure of the complete system (CPU, memory, buses and peripherals) and reinforces that core content with an emphasis on divergent examples. This approach to computer architecture is an effective arrangement that provides sufficient detail at the logic and organizational levels appropriate for EE/ECE departments as well as for Computer Science readers. The text goes well beyond the minimal curriculum coverage and introduces topics that are important to anyone involved with computer architecture in a way that is both thought provoking and interesting to all. Important Notice: Media content referenced within the product description or the product text may not be available in the ebook version.

Enhanced Phase-Locked Loop Structures for Power and Energy Applications

Enhanced Phase-Locked Loop Structures for Power and Energy Applications

  • Author: Masoud Karimi-Ghartema
  • Publisher: John Wiley & Sons
  • ISBN: 111879513X
  • Category: Technology & Engineering
  • Page: 232
  • View: 3744
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Filling the gap in the market dedicated to PLL structures for power systems Internationally recognized expert Dr. Masoud Karimi-Ghartemani brings over twenty years of experience working with PLL structures to Enhanced Phase-Locked Loop Structures for Power and Energy Applications, the only book on the market specifically dedicated to PLL architectures as they apply to power engineering. As technology has grown and spread to new devices, PLL has increased in significance for power systems and the devices that connect with the power grid. This book discusses the PLL structures that are directly applicable to power systems using simple language, making it easily digestible for a wide audience of engineers, technicians, and graduate students. Enhanced phase-locked loop (EPLL) has become the most widely utilized architecture over the past decade, and many books lack explanation of the structural differences between PLL and EPLL. This book discusses those differences and also provides detailed instructions on using EPLL for both single-phase applications and three-phase applications. The book’s major topics include: A basic look at PLL and its standard structure A full explanation of EPLL EPLL extensions and modifications Digital implementation of EPLL Extensions of EPLL to three-phase structures Dr. Karimi-Ghartemani provides basic analysis that helps readers understand each of the structures presented without requiring complicated mathematical proofs. His book is filled with illustrated examples and simulations that connect theory to the real world, making Enhanced Phase-Locked Loop Structures for Power and Energy Applications an ideal reference for anyone working with inverters, rectifiers, and related technologies.

Electrical, Electronics, and Digital Hardware Essentials for Scientists and Engineers

Electrical, Electronics, and Digital Hardware Essentials for Scientists and Engineers

  • Author: Ed Lipiansky
  • Publisher: John Wiley & Sons
  • ISBN: 1118414543
  • Category: Technology & Engineering
  • Page: 664
  • View: 979
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A practical guide for solving real-world circuit board problems Electrical, Electronics, and Digital Hardware Essentials for Scientists and Engineers arms engineers with the tools they need to test, evaluate, and solve circuit board problems. It explores a wide range of circuit analysis topics, supplementing the material with detailed circuit examples and extensive illustrations. The pros and cons of various methods of analysis, fundamental applications of electronic hardware, and issues in logic design are also thoroughly examined. The author draws on more than twenty-five years of experience in Silicon Valley to present a plethora of troubleshooting techniques readers can use in real-life situations. Plus, he devotes an entire chapter to the design of a small CPU, including all critical elements—the complete machine instruction set, from its execution path to logic implementation and timing analysis, along with power decoupling, resets, and clock considerations. Electrical, Electronics, and Digital Hardware Essentials for Scientists and Engineers covers: Resistors, inductors, and capacitors as well as a variety of analytical methods The elements of magnetism—an often overlooked topic in similar books Time domain and frequency analyses of circuit behavior Numerous electronics, from operational amplifiers to MOSFET transistors Both basic and advanced logic design principles and techniques This remarkable, highly practical book is a must-have resource for solid state circuit engineers, semiconductor designers and engineers, electric circuit testing engineers, and anyone dealing with everyday circuit analysis problems. A solutions manual is available to instructors. Please email [email protected] to request the solutions manual. An errata sheet is available.

VLSI Memory Chip Design

VLSI Memory Chip Design

  • Author: Kiyoo Itoh
  • Publisher: Springer Science & Business Media
  • ISBN: 3662044781
  • Category: Technology & Engineering
  • Page: 495
  • View: 762
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A systematic description of microelectronic device design. Topics range from the basics to low-power and ultralow-voltage designs, subthreshold current reduction, memory subsystem designs for modern DRAMs, and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

Memories in Wireless Systems

Memories in Wireless Systems

  • Author: Rino Micheloni,Giovanni Campardo,Piero Olivo
  • Publisher: Springer Science & Business Media
  • ISBN: 3540790780
  • Category: Technology & Engineering
  • Page: 310
  • View: 7309
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For the technological progress in communication technology it is necessary that the advanced studies in circuit and software design are accompanied with recent results of the technological research and physics in order to exceed its limitations. This book is a guide which treats many components used in mobile communications, and in particular focuses on non-volatile memories. It emerges following the conducting line of the non-volatile memory in the wireless system: On the one hand it develops the foundations of the interdisciplinary issues needed for design analysis and testing of the system. On the other hand it deals with many of the problems appearing when the systems are realized in industrial production. These cover the difficulties from the mobile system to the different types of non-volatile memories. The book explores memory cards, multichip technologies, and algorithms of the software management as well as error handling. It also presents techniques of assurance for the single components and a guide through the Datasheet lectures.

Semiconductor Memories

Semiconductor Memories

Technology, Testing, and Reliability

  • Author: Ashok K. Sharma
  • Publisher: Wiley-IEEE Press
  • ISBN: 9780780310001
  • Category: Technology & Engineering
  • Page: 480
  • View: 6134
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Semiconductor Memories provides in-depth coverage in the areas of design for testing, fault tolerance, failure modes and mechanisms, and screening and qualification methods including. * Memory cell structures and fabrication technologies. * Application-specific memories and architectures. * Memory design, fault modeling and test algorithms, limitations, and trade-offs. * Space environment, radiation hardening process and design techniques, and radiation testing. * Memory stacks and multichip modules for gigabyte storage.

Error Correction Codes for Non-Volatile Memories

Error Correction Codes for Non-Volatile Memories

  • Author: Rino Micheloni,A. Marelli,R. Ravasio
  • Publisher: Springer Science & Business Media
  • ISBN: 1402083912
  • Category: Technology & Engineering
  • Page: 338
  • View: 2413
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Nowadays it is hard to find an electronic device which does not use codes: for example, we listen to music via heavily encoded audio CD's and we watch movies via encoded DVD's. There is at least one area where the use of encoding/decoding is not so developed, yet: Flash non-volatile memories. Flash memory high-density, low power, cost effectiveness, and scalable design make it an ideal choice to fuel the explosion of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. A collection of software routines is also included for better understanding. The authors form a research group (now at Qimonda) which is the typical example of a fruitful collaboration between mathematicians and engineers.

DRAM circuit design

DRAM circuit design

a tutorial

  • Author: Brent Keeth,R. Jacob Baker
  • Publisher: Wiley-IEEE Press
  • ISBN: 9780780360143
  • Category: Computers
  • Page: 200
  • View: 5526
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"DRAM Circuit Design" teaches readers the introductory level design of DRAM memory chips. It focuses on giving readers a reference that can be used to educate students or practicing design engineers in DRAM circuit design.